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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD401
DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorl power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 200 150 5 2 25 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IB=0 IC=500m A;IB=50m A VCB=150V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V IC=0.4A ; VCE=10V 40 5 MIN 150 200 5 TYP.
2SD401
SYMBOL VCEO VCBO VEBO VCEsat ICBO IEBO hFE fT
MAX
UNIT V V V
1.0 50 50 400 |I |I
V A A
MHz
hFE classifications R 40-80 O 70-140 Y 120-240 G 200-400
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD401
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD401
JMnic


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